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 Advanced Technical Information
MWI 45-12 T6K IC25 = 43 A = 1200 V VCES VCE(sat) typ. = 1.9 V
IGBT Module Sixpack
Short Circuit SOA Capability Square RBSOA
10, 23 14 13 NTC 18 17 22 21 11, 12 15, 16 19, 20
8
7
6 5 9, 24
4 3
2 1
IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC Ptot TC = 25C TC = 80C VGE = 15 V; RG = 36 ; TVJ = 125C RBSOA; clamped inductive load; L = 100 H VCE = 900 V; VGE = 15 V; RG = 36 ; TVJ = 125C SCSOA; non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 43 31 50 VCES 10 160 V V A A A s W
Features * Trench IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits * HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current * Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate
Symbol
Conditions
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 0.6 400 90 50 520 90 2.5 3.4 1810 240 0.3 2.3 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.8 K/W K/W
Typical Applications * AC drives * power supplies with power factor correction
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthCH
IC = 25 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C
VCE = 0 V; VGE = 20 V
Inductive load, TVJ = 125C VCE = 600 V; IC = 25 A VGE = 15 V; RG = 36
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 25 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2005 IXYS All rights reserved
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502
Advanced Technical Information
MWI 45-12 T6K
Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 49 32 A A
Equivalent Circuits for Simulation
Conduction
Symbol VF IRM trr RthJC RthCH
Conditions IF = 25 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 25 A; diF/dt = -600 A/s; TVJ = 100C VR = 600 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 2.4 1.6 25 150 0.3 2.7 V V A ns 0.9 K/W K/W
IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = tbd; R0 = tbd Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.6 V; R0 = 13 m Thermal Response
Temperature Sensor NTC Symbol R25 B25/85 Module Symbol TVJ TVJM Tstg VISOL Md Symbol dS dA Weight Conditions operating Maximum Ratings -40...+125 -40...+150 -40...+125 2500 2.0 - 2.2 C C C V~ Nm Conditions T = 25C Characteristic Values min. typ. max. 4.45 4.7 3510 5.0 k K
IGBT (typ.) Cth1 = tbd J/K; Rth1 = tbd K/W Cth2 = tbd J/K; Rth2 = tbd K/W Free Wheeling Diode (typ.) Cth1 = tbd J/K; Rth1 = tbd K/W Cth2 = tbd J/K; Rth2 = tbd K/W
IISOL 1 mA; 50/60 Hz Mounting torque (M4) Conditions Creepage distance on surface Strike distance in air
Characteristic Values min. typ. max. 12.7 12.7 40 mm mm g
Dimensions in mm (1 mm = 0.0394")
(c) 2005 IXYS All rights reserved
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